TL;DR · 30-second read
The Short Version
- A chip company called Navitas has launched a new power part made of silicon carbide, a tough material that handles high voltage while wasting less energy than ordinary silicon chips.
- It is built for about 2,300 volts, roughly 20 times what a US wall socket delivers, and is aimed at both the electric grid and the huge buildings that run AI.
- That rating fits the point where grid electricity is converted for use inside those buildings, a job that grows as AI draws more power.
- Prices, shipping dates and buyers have not been announced.
igor’sLAB reported that Navitas Semiconductor (Nasdaq: NVTS) has introduced a silicon carbide (SiC) power module rated for 2,300 volts with an on-resistance of 8 milliohms (mΩ), targeting two markets: power-grid equipment and AI data centers.
A power module packages several high-voltage switching chips into one unit that converts and controls electricity in equipment such as inverters, converters and transformers. Navitas has not published pricing, availability dates or named customers for the part.
Executive Summary
Navitas has added a 2,300-volt, 8 mΩ silicon carbide module to its lineup and is pitching it at utilities and AI data center operators at the same time. The two figures describe the part’s core job: the voltage rating sets how high a voltage it can safely switch, and the on-resistance sets how much energy it loses as heat while conducting current.
The more telling detail is the voltage class. A 2,300-volt rating is well above what an 800-volt rack power system needs, and it lines up instead with the equipment that sits between the utility and the facility. Read that way, the launch is less about server racks and more about the grid connection that feeds them, which is where grid hardware and data center hardware start to share components.
The announcement establishes specifications and target markets. It does not yet establish production volume, design wins or delivery timing, which are the measures that determine whether a power-semiconductor launch becomes revenue.
What 2,300 Volts Actually Tells You
Power semiconductors are rated with generous headroom above the voltage they normally operate at, because switching events produce voltage spikes and because high-voltage parts are vulnerable to failures triggered by cosmic radiation when run close to their limit. As a common rule of thumb, systems built around an 800-volt direct-current (DC) bus, the architecture Nvidia and its partners have proposed for next-generation AI racks, use devices rated around 1,200 volts. A 2,300-volt part is oversized for that job.
Where a 2,300-volt rating fits naturally is in systems running around 1,500 volts DC, the standard for utility-scale solar and battery storage, and in medium-voltage converters that stack many modules in series to handle the thousands of volts on distribution lines. In a data center, that describes the front end: the equipment that takes medium-voltage utility power and converts it down for the facility. Nvidia’s published 800-volt DC plan envisions eventually doing that conversion with solid-state transformers, which replace heavy iron-core transformers with semiconductor switching. That is substation-class work carried out on the data center’s property.
This is why Navitas’s dual targeting is coherent rather than diffuse. The grid customer and the AI data center customer are buying the same function, high-voltage conversion at the point where utility power is handed off. The people most affected are facility electrical designers, transformer and switchgear vendors, and utilities planning interconnections, more than server and rack builders.
Why 8 Milliohms Matters for Heat and Size
On-resistance is the electrical resistance of the switch when it is turned on. Conduction loss scales with the square of current times resistance, so at the high currents a large converter carries, a few milliohms translate into meaningful heat. Less heat means smaller cooling hardware and potentially denser converters, which matters on a data center site where floor space and cooling capacity are already committed to computing.
On-resistance is only one line on a datasheet, however. Switching losses, how resistance rises as the device heats up, thermal resistance of the package and long-term reliability under high voltage all determine real-world efficiency. Buyers evaluating the part will want the full characterization, not just the headline figure.
A Product Launch, Not Yet a Supply Commitment
Silicon carbide is a competitive market with larger established suppliers, including Infineon, onsemi, STMicroelectronics, ROHM and Wolfspeed, several of which also target grid and data center power. A new module enters a field where utilities and equipment makers qualify parts over long cycles and value proven reliability and multi-year supply assurance as much as headline specifications.
For investors watching NVTS, the distinction is between a product introduction and a revenue event. What the announcement substantiates is a specification and a market intent. What would change the picture is a named equipment partner, a qualification milestone with a utility-grade customer or a volume production date.
Background
Navitas Semiconductor, listed on Nasdaq under NVTS, built its business on gallium nitride power chips and added silicon carbide through its 2022 acquisition of GeneSiC Semiconductor. Gallium nitride tends to suit lower-voltage, high-frequency conversion, while silicon carbide dominates higher-voltage applications such as electric vehicles, solar inverters and industrial drives.
In 2025, Navitas was among the power-semiconductor suppliers Nvidia named as partners for its 800-volt DC data center architecture, part of an industry push to rethink power delivery as AI rack power rises well beyond what traditional designs were built for. That effort spans the rack, the facility power room and the utility connection, and the last of these is where high-voltage silicon carbide parts like this one compete. Source: Navitas Introduces 2,300-Volt SiC Power Module with 8 mΩ for Power Grids and AI Data Centers (igor’sLAB). Coverage of Navitas Semiconductor’s new high-voltage silicon carbide module for grid and AI data center power.Sources